The 4MBI100T-060 is IGBT Module made by Fuji Electric.
4MBI100T-060 pinout

Brief overview of the content in a 4MBI100T-060 PDF file

SPECIFICATION Device Name Type Name Spec No IGBT Module 4MBI100T 060 MS5F 5431 Apr 23 03 S Ogawa Apr 23 03 T Miyasaka Apr 23 03 K Yamada T Fujihira Fuji Electric Co Ltd Matsumoto Factory MS5F 5431 1 14 a b c H04 004 07 Revised Records Date Classification Ind Apr 23 03 enactment Content Applied date Issued date Drawn Checked Approved T Miyasaka T Fujihira K Yamada Oct 16 03 Revision a Added thermistor P3 14 4 14 12 14 Y Kobayashi T Miyasaka K Yamada Y Seki Dec 10 03 Revision b Revised VCE sat VF P4 14 10 14 12 14 Y Kobayashi S Miyashita K Yamada Y Seki Sep 07 04 Revision c Revised VF P4 14 12 14 Y Kobayashi S Miyashita K Yamada Y Seki MS5F 5431 2 14 a b c H04 004 06 1 Outline Drawing Unit mm 4MBI100T 060 a 2 Equivalent circuit Inverter shows reference dimension Thermistor 89 MS5F 5431 3 14 a b c H04 004 03 3 Absolute Maximum Ratings at Tc 25 C unless otherwise specified Items Collector Emitter voltage Symbols VCES Conditions Ic 1mA Maximum Ratings 600 Units V Gate Emitter voltage VGES 20 V Ic Duty 100 100 Collector current Ic pulse IF 1ms Duty 50 200 A 100 IF pulse 1ms 200 Collector Power Dissipation

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An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Manufacturers : Fuji Electric

FUJI - 4MBI100T-060 Datasheet PDF


IGBT Module

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