The 2SC4529 is Silicon NPN Epitaxial VHF Wide Brand Amplifier made by Hitachi.
Brief overview of the content in a 2SC4529 PDF file
2SC4529 Silicon NPN Epitaxial VHF Wide Band Amplifier Absolute Maximum Ratings Ta 25 C Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol Rating Unit VCBO VCEO VEBO IC iC peak PC PC 1 Junction temperature Storage temperature Tj Tstg 30 20 3 300 500 1 5 150 C V V V mA TO 126 MOD mA W 1 2 3 1 Emitter 2 Collector 3 Base 55 to C 150 Note 1 Value at TC 25 C Electrical Characteristics Ta 25 C Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff Current DC current transfer r
[ Comprehensive information ] |
Characteristics of NPN Transistors1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators. 3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter. 4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source. 5. Inverted Output: NPN transistors are known for producing an inverted output relative to their input. Manufacturers : Hitachi  |
HITACHI 2SC4529 TRANSISTOR Silicon NPN Epitaxial VHF Wide Brand Amplifier [ Datasheet Search ] |
[ 2SC4529 PDF DownLoad ( HITACHI ) ] |
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