The 2SC4180W is Silicon Epitaxial Planar Transistor made by Galaxy Semi-Conductor.
Brief overview of the content in a 2SC4180W PDF file
BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z Excellent hFE linearity High voltage and current Power dissipation PC 150mW Small package Production specification 2SC4180W Pb Lead free APPLICATIONS z Audio frequency general purpose amplifier SOT 323 ORDERING INFORMATION Type No 2SC4180W Marking D15 D16 D17 D18 Package Code SOT 323 MAXIMUM RATING Ta 25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Collector Dissipation Junction and Storage Temperature Value 120 120 5 50 150 55 150 Units V V V mA mW ELECTRICAL CHARACTERISTICS Ta 25 unless otherwise specified Document number BL SSSTF040 Rev A www galaxycn com 1 Free Datasheet http www datasheetgo.com BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector base breakdown voltage Collector emitter breakdown voltage Emitter base breakdown voltage Collector cut off current Emitter cut off current DC current gain Collector emitter saturation voltage Transition frequency Collector output capacitance Symbol V BR CBO V BR CEO V BR EBO ICBO IEBO hFE VCE sat fT Cob Test conditions IC 100 A IE 0 IC 1mA IB 0 IE 100
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Manufacturers : Galaxy Semi-Conductor  |
GSC 2SC4180W TRANSISTOR Silicon Epitaxial Planar Transistor [ Datasheet Search ] |
[ 2SC4180W PDF DownLoad ( GSC ) ] |
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