The 2SC4177W is Silicon Epitaxial Planar Transistor made by Galaxy Semi-Conductor.

Brief overview of the content in a 2SC4177W PDF file
BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z Excellent hFE linearity High voltage and current Complementary to 2SA1611 Small package Production specification 2SC4177W Pb Lead free APPLICATIONS z Audio frequency general purpose amplifier SOT 323 ORDERING INFORMATION Type No 2SC4177W Marking L4 L5 L6 L7 Package Code SOT 323 MAXIMUM RATING Ta 25 unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Collector Dissipation Junction and Storage Temperature Value 60 50 5 100 150 55 150 Units V V V mA mW ELECTRICAL CHARACTERISTICS Ta 25 unless otherwise specified Document number BL SSSTF039 Rev A www galaxycn com 1 Free Datasheet http www datasheetgo.com BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector base breakdown voltage Collector emitter breakdown voltage Emitter base breakdown voltage Collector cut off current Emitter cut off current DC current gain Collector emitter saturation voltage Base emitter saturation voltage Transition frequency Collector output capacitance Symbol V BR CBO V BR CEO V BR EBO ICBO IEBO hFE VCE sat VBE sat fT Cob Test
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Manufacturers : Galaxy Semi-Conductor ![]() |
GSC 2SC4177W TRANSISTOR Silicon Epitaxial Planar Transistor [ Datasheet Search ] |
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