The 2N3055 is NPN Power Silicon Transistor made by MA-COM.
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Brief overview of the content in a 2N3055 PDF file
2N3055 NPN Power Silicon Transistor Features Available in JAN JANTX JANTXV per MIL PRF19500 407 TO 3 TO 204AA Package Rev V1 Electrical Characteristics Parameter Off Characteristics Collector Emitter Breakdown Voltage Collector Emitter Cutoff Current Emitter Base Cutoff Current On Characteristics Forward Current Transfer Ratio Collector Emitter Saturation Voltage Emitter Base Saturation Voltage Dynamic Characteristics Test Conditions Symbol Units IC 200 mAdc IC 200 mAdc RBE 100 VBE 1 5 Vdc IC 200 mAdc VCE 60 Vdc VBE 1 5 Vdc VCE 100 Vdc VEB 7 0 Vdc V BR CEO V BR CER V BR CEX Vdc ICEO ICEX mAdc IEBO mAdc IC 0 5 Adc VCE 4 0 Vdc IC 4 0 Adc VCE 4 0 Vdc IC 10 0 Adc VCE 4 0 Vdc IC 4 0 Adc IB 0 4 Adc IC 10 0 Adc IB 3 3 Adc IC 4 0 Adc VCE 4 0 Vdc HFE VCE SAT Vdc VBE SAT Vdc Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio IC 1 Adc VCE 4 0 Vdc f 100 kHz
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Characteristics of NPN Transistors1. Bipolar Junction: NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.2. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators. 3. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter. 4. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source. 5. Inverted Output: NPN transistors are known for producing an inverted output relative to their input. Manufacturers : MA-COM  |
MACOM 2N3055 TRANSISTOR NPN Power Silicon Transistor [ Datasheet Search ] |
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