The 2MBI150U4H-170 is IGBT MODULE made by Fuji.
Brief overview of the content in a 2MBI150U4H-170 PDF file
SPECIFICATION Device Name IGBT MODULE Type Name 2MBI150U4H 170 Spec No MS5F 6144 Jun 01 05 S Miyashita Jun 01 05 T Miyasaka K Yamada Y Seki MS5F6144 1 13 a H04 004 07b Revised Records Date Classification Ind Jun 01 05 Enactment Content Applied date Drawn Checked Checked Approved Issued date T Miyasaka K Yamada Y Seki Oct 25 05 Revision a Revised characteristics VCE sat P4 13 S Miyashita O Ikawa K Yamada T Miyasaka MS5F6144 2 13 a H04 004 06b 1 Outline Drawing Unit mm 2MBI150U4H 170 2 Equivalent circuit MS5F6144 3 13 a H04 004 03a 3 Absolute Maximum Ratings at Tc 25 C unless otherwise specified It em s Sym bols Conditions Collector Emitter voltage VCES Gate Emitter voltage VGES Ic Continuous Tc 25 C Tc 80 C Collector current Icp 1ms Ic Tc 25 C Tc 80 C Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base 1 Viso AC 1min Screw Mounting 2 Torque Terminals 3 1 All terminals should be connected together when isolation test will be done 2 Recommendable Value Mounting 2 5 3 5 Nm M5 or M6 3 Recommendable Value Terminals 3 5 4 5
[ Comprehensive information ] |
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance. Manufacturers : Fuji  |
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