The 2MBI150U4H-120 is IGBT Module made by Fuji Electric.
Brief overview of the content in a 2MBI150U4H-120 PDF file
2MBI150U4H 120 IGBT MODULE U series 1200V 150A 2 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Ampli er Uninterruptible Power Supply Industrial machines such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc 25 C unless otherwise speci ed Items Collector Emitter voltage Gate Emitter voltage Symbols VCES VGES Conditions Ic Continuous Collector current Ic pulse 1ms Ic Ic pulse Collector power dissipation Pc Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base 1 Viso Screw torque Mounting 2 Terminals 2 1ms 1 device AC 1min Note 1 All terminals should be connected together when isolation test will be done Note 2 Recommendable value Mounting 2 5 3 5 N m M5 or M6 Terminals 3 5 4 5 N m M6 Electrical characteristics at Tj 25 C unless otherwise speci ed Tc 25 C Tc 80 C Tc 25 C Tc 80 C Items Zero gate voltage collector current Gate Emitter leakage current Gate Emitter threshold voltage Collector Emitter saturation voltage Input capacitance Turn on time Turn off time Forward on voltage Rev
[ Comprehensive information ] |
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance. Manufacturers : Fuji Electric  |
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