The 2MBI150U4B-120 is IGBT MODULE made by Fuji.
2MBI150U4B-120 pinout

Brief overview of the content in a 2MBI150U4B-120 PDF file

SPECIFICATION Device Name IGBT MODULE Type Name 2MBI150U4B 120 Spec No MS5F 6059 Mar 09 05 S Miyashita Mar 09 05 T Miyasaka K Yamada Y Seki MS5F6059 1 13 H04 004 07b Revised Records Date Classification Ind Mar 09 05 Enactment Content Applied date Drawn Checked Checked Approved Issued date T Miyasaka K Yamada Y Seki MS5F6059 2 13 H04 004 06b 1 Outline Drawing Unit mm 2MBI150U4B 120 2 Equivalent circuit MS5F6059 3 13 H04 004 03a 3 Absolute Maximum Ratings at Tc 25oC unless otherwise specified It em s Symbols Conditions Collector Emitter voltage Gate Emitter voltage VCES VGES Ic Continuous Collector current Icp 1ms Ic Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base 1 Viso AC 1min Screw Mounting 2 Torque Terminals 2 1 All terminals should be connected together when isolation test will be done 2 Recommendable Value 2 5 to 3 5 Nm M5 Tc 25oC Tc 80oC Tc 25oC Tc 80oC Max i m u m Ratings 1200 20 200 150 400 300 150 300 780 150 40 to 125 Units V V A W oC 2500 VAC 3 5 N m 4 Electrical characteristics at Tj 25oC unless otherwise specified

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An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

Manufacturers : Fuji

FUJI - 2MBI150U4B-120 Datasheet PDF



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