This is one of the IGBT types.
This part name is HGTG30N60, SGP30N60, SGW30N60.
The Marking code is G30N60.
This product has High Speed IGBT in NPT-technology functions.
The package is TO-247 Type
Manufacturers of product is Fairchid, Onsemi, Infineon.
Image and pinout :
The G30N60 Transistor is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Main features of High Speed IGBT
1. High-speed operation: The switching speed of IGBT is improved through NPT technology. This can reduce power losses in semiconductors and improve efficiency due to fast switching speeds.
2. High voltage characteristics: High Speed IGBT has high voltage characteristics. It can operate reliably in high voltage environments and is suitable for high voltage applications.
3. Low losses: NPT technology reduces the voltage drop of the IGBT and reduces switching losses. This minimizes power loss and realizes efficient energy conversion.
Key differences between High Speed IGBT and other common IGBTs
1. Switching speed: High Speed IGBT is an IGBT specifically designed for high-speed operation. They have faster switching speeds than typical IGBTs, making them more effective in high-frequency applications or high-speed power electronic control systems. 2. Efficiency: High Speed IGBTs are designed to reduce switching losses and minimize voltage drops to keep power losses to a minimum. This helps increase the efficiency of power conversion. 3. Response speed: High Speed IGBT has a fast response speed, providing faster response. This enables more accurate and faster motion in high-speed electronic control systems.
Some of the text files within the PDF file
HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49343. Features • >100kHz Operation at 390V, 30A • 200kHz Operation at 390V, 18A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC • Low Conduction Loss Ordering Information PART NUMBER HGTG30N60A4 NOTE: PACKAGE TO-247 BRAND G30N60A4 Packaging JEDEC STYLE T [ … ]
Please refer to the file for details.