BFU910F PDF – NPN wideband silicon germanium RF transistor

BFU910F PDF datasheet can download.

This product has NPN wideband silicon germanium RF transistor functions.

This is one of the semiconductor types. This part name is BFU910F.

Manufacturers of the product is NXP.

Image and pinout :

BFU910F pdf datasheet pinout


Some of the text files within the PDF file

BFU910F NPN wideband silicon germanium RF transistor Rev. 2 — 16 January 2015 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. The BFU910F is suitable for small signal applications up to 20 GHz. 1.2 Features and benefits  Low noise high gain microwave transistor  Minimum noise figure (NFmin) = 0.65 dB at 12 GHz  Maximum stable gain 14.2 dB at 12 GHz  90 GHz fT SiGe technology 1.3 Applications  Ku band DBS Low-Noise blocks 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCE collector-emitter voltage RBE  1 M IC collector current Ptot total power dissipation Tsp  90 C hFE DC current gain IC = 6 mA; VCE = 2 V CCBS collector-base capacitance VCB = 2 V; f = 1 MHz fT transition frequency IC = 6 mA; VCE = 2 V MSG maximum stable gai [ … ]

Please refer to the file for details.

BFU910F PDF Datasheet