K4A60DA PDF – 600V, MOSFET – TK4A60DA

This is one of the semiconductor types. This part name is K4A60DA.

This product has TK4A60DA functions.

Manufacturers of product is Toshiba.

Image and pinout :

K4A60DA datasheet pinout

1. Gate
2. Drain
3. Source

K4A60DA PDF Datasheet

Some of the text files within the PDF file

TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)
• Low leakage current: IDSS = 10 μA (VDS = 600 V)
• Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Avalanche current : IAR = 3.5 A
2. Drain-source voltage : VDSS = 600 V
3. Gate-source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 35 W
5. Single pulse avalanche energy (Note 2) : EAS = 158 mJ
6. Repetitive avalanche energy (Note 3) : EAR = 3.5 mJ

[ … ]

Please refer to the file for details.