TGA2573 PDF datasheet can download.
This product has 2-18 GHz 10 Watt GaN Amplifier functions.
This is one of the semiconductor types. This part name is TGA2573.
Manufacturers of the product is TriQuint Semiconductor.
Image and pinout :
Some of the text files within the PDF file
TGA2573 2-18 GHz 10 Watt GaN Amplifier Applications • Military Radar • Communications • Electronic warfare • Electronic counter measures • Test Equipment Product Features • Frequency Range: 2 – 18 GHz • Psat: 40.0 dBm at Vd=30 V • PAE: 25% typical • Small Signal Gain: 9 dB • Return Loss: 15 dB • Bias: Vd = 30 V, Idq = 500 mA, Vg = -3.4 V typical • Technology: 0.25 µm GaN on SiC • Dimensions: 2.55 x 5.54 x 0.1 mm General
TriQuint’s TGA2573 is a wideband, high power GaN HEMT amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 25% PAE and 9 dB small signal gain at a drain bias of 30 volts. Fully matched to 50 ohms and with integrated DC blocking caps on both RF ports, the TGA2573 is ideally suited to support both commercial and defense related applications. The TGA2573 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. [ … ]
Please refer to the file for details.