This is one of the semiconductor types. This part name is K8A60DA.
This product has TK8A60DA functions.
Manufacturers of product is Toshiba Semiconductor.
Image and pinout :
K8A60DA PDF Datasheet
Some of the text files within the PDF file
TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 7.5 30 45 270 7.5 4.5 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperatu [ … ]
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