This is one of the semiconductor types. This part name is K80E08K3.
This product has TK80E08K3 functions.
Manufacturers of product is Toshiba.
Image and pinout :
K80E08K3 PDF Datasheet
Some of the text files within the PDF file
Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : IDSS = 10 µA (max) (VDS = 75 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID ID IDP PD EAS IAR EAR dv/dt Tch Tstg Rating 75 75 ±20 80 70 240 200 107 40 20 12 175 −55~175 Unit V V V A A A W mJ A mJ V/ns °C °C DC (Note 1,4) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Peak diode recovery dv/dt (Note 5) Channel temperature (Note 4) Storage temperature range (Note 4) JEDEC JEITA TOSHIBA TO-220AB SC-46 We [ … ]
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