K80E07NE PDF datasheet can download.
This product has TK80E07NE functions.
This is one of the semiconductor types. This part name is K80E07NE.
Manufacturers of the product is Toshiba.
Image and pinout :
Some of the text files within the PDF file
TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. z Low drain−source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z Low leakage current : IDSS = 10 µA (max) (VDS = 70 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.3 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) DC (Note 1,4) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Peak diode recovery dv/dt (Note 5) Channel temperature (Note 4) Storage temperature range (Note 4) Thermal Characteristics Symbol VDSS VDGR VGSS ID ID IDP PD EAS IAR EAR dv/dt Tch Tstg Rating 70 70 ±20 80 58 240 87 16.4 40 8.7 11.5 175 −55~175 Unit V V V A A A W [ … ]
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