IRFP640 PDF datasheet can download.
This product has Power MOSFET functions.
This is one of the semiconductor types. This part name is IRFP640.
Manufacturers of the product is LTO-DMS.
Image and pinout :
Some of the text files within the PDF file
IRFP640 HEXFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast switching Ease of Paralleling Simple Drive Requirements ® Power MOSFET VDSS = 200V ID = 18A RDS(ON) =0.18Ω
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Pin1–Gate Pin2–Drain Pin3–Source Absolute Maximum Ratings Parameter Max. Units ID@TC=25 ْC Continuous Drain Current, VGS@10V ID@TC=100ْC Continuous Drain Current, VGS@10V IDM Pulsed Drain Current Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ① �� [ … ]
Please refer to the file for details.