This product has 300V / 200A functions.
This is one of the semiconductor types. This part name is 30F124, GT30F124.
Manufacturers of this IGBT is Toshiba
Some of the text files within the PDF file :
The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.
(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages
[ … ]
IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current. Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier.
Parallel MOSFETs have been used for the drive circuitry of plasma display panels (PDPs). Recently, however, IGBTs are commonly used in large current applications due to their superior current conduction capability.
Please refer to the file for details. 30F124 PDF datasheet can download.